RDN120N25FU6 Rohm Semiconductor, RDN120N25FU6 Datasheet - Page 4

• Manufacturer Part Number: RDN120N25FU6
• Description: MOSFET N-CH 250V 12A TO-220FN
• Manufacturer: Rohm Semiconductor

Specifications of RDN120N25FU6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1224pF @ 10V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220FN-3 (Straight Leads)
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 12 A
• Power Dissipation: 40 W
• Mounting Style: Through Hole
• Gate Charge Qg: 31 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
10000
1000
100
10
1000
0.1
100
Fig.10 Typical Capacitance vs.
10
DRAIN SOURCE VOLTAGE : V
0.1
Fig.13 Switching Characteristcs
t
t
r
d (on)
t
d (off)
t
f
Drain-Source Voltage
1
DRAIN CURRENT : I
1
10
C
100
C
C
10
iss
oss
rss
f=1MHz
V
Ta=25°C
Pulsed
GS
D
DS
Ta=25°C
V
V
R
Pulsed
(A)
=0V
DD
GS
G
(V)
=10Ω
=100V
=10V
1000
100
Fig.11 Dynamic Input Characteristics
250
225
200
175
150
125
100
0.001
75
50
25
0.01
0
0.1
10
1
0
10µ
V
Fig.14 Normalized Transient
D=1
0.2
0.1
0.05
0.02
0.01
0.5
DS
Single pulse
TOTAL GATE CHARGE : Q
100µ
10
Thermal Resistance vs.
Pulse Width
PULSE WIDTH : PW (S)
1m
V
V
V
DD
DD
DD
20
=50V
=125V
=200V
10m
V
V
V
Tc=25°C
θ
θ
DD
DD
DD
th(ch-c)
th(ch-c)
=50V
=125V
=200V
PW
100m
(t)=r(t) • =θ
=3.13°C / W
30
Ta=25°C
I
Pulsed
g
D
T
(nC)
=12A
1
D=
V
th(ch-c)
GS
PW
4
T
0
25
12.5
0
10
1000
100
10
Fig.12 Reverse Recovery Time
0.1
REVERSE DRAIN CURRENT : I
vs. Reverse Drain Current
1
RDN120N25
Rev.A
Ta=25°C
di / dt=100A / µs
V
Pulsed
10
GS
=0V
DR
(A)
4/4
100