RDN120N25FU6 Rohm Semiconductor, RDN120N25FU6 Datasheet - Page 3

• Manufacturer Part Number: RDN120N25FU6
• Description: MOSFET N-CH 250V 12A TO-220FN
• Manufacturer: Rohm Semiconductor

Specifications of RDN120N25FU6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1224pF @ 10V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220FN-3 (Straight Leads)
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 12 A
• Power Dissipation: 40 W
• Mounting Style: Through Hole
• Gate Charge Qg: 31 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
Electrical characteristic curves
6.4
5.6
4.8
3.2
2.4
1.6
0.8
4
0
−50 −25
0.45
0.35
0.25
0.15
0.05
100
0.4
0.3
0.2
0.1
0.1
10
Fig.4 Gate Threshold Voltage
0
−50
1
CHANNEL TEMPERATURE : T
1
Fig.7 Static Drain-Source
Operation in this
area is limited
by R
CHANNEL TEMPERATURE : T
DRAIN-SOURCE VOLTAGE : V
−25
DS
vs. Channel Temperature
Fig.1 Maximun Safe
(on)
0
On-State Resistance vs.
Channel Temperature
0
25
10
Operating Area
I
D
25
=12A
50
50
6A
75
75
100
100 125 150
V
I
D
T
Single Pulse
100
DS
=1mA
C
=25°C
ch
=10V
V
Pulsed
GS
(°C)
ch
125
DS
=10V
(°C)
(V)
1000
150
0.01
0.1
Fig.8 Forward Transfer Admittance
Fig.2 Typical Output Characteristics
0.5
0.2
1
0.01
50
20
10
20
18
16
14
12
10
5
2
1
0.05
8
6
4
2
0
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0
Fig.5 Static Drain-Source
DRAIN-SOURCE VOLTAGE : V
0.1
vs. Drain Current
1
DRAIN CURRENT : I
0.2
0.1
DRAIN CURRENT : I
On-State Resistance
vs. Drain Current
2
10V
8V
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.5
3
4
1
1
7V
5
2
V
6
GS
6V
5V
5
=4V
D
10
7
D
(A)
10 20
V
Pulsed
(A)
GS
V
Pulsed
Ta=25°C
Pulsed
8
DS
=10V
DS
=10V
9
(V)
100
50
10
0.01
0.01
100
100
1.5
0.5
0.1
0.1
10
10
1
0
1
1
0
0
0
Fig.9 Reverse Drain Current vs.
Fig.6 Static Drain-Source
V
Pulsed
GATE-SOURCE VOLTAGE : V
SOURCE-DRAIN VOLTAGE : V
DS
GATE-SOURCE VOLTAGE : V
6A
=10V
1
0.2
5
Fig.3 Typical Transfer
Source-Drain Voltage
On-State Resistance vs.
Gate-Source Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
I
D
=12A
2
RDN120N25
10
0.4
Rev.A
Characteristics
3
15
0.6
4
20
0.8
5
Ta=25°C
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
25
V
Pulsed
GS
1
GS
GS
SD
6
(V)
=0V
(V)
(V)
3/4
30
1.2
6