STW34NB20 STMicroelectronics, STW34NB20 Datasheet - Page 3

• Manufacturer Part Number: STW34NB20
• Description: MOSFET N-CH 200V 34A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STW34NB20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3300pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 34 A
• Power Dissipation: 180000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Current, Drain: 34 A
• Gate Charge, Total: 60 nC
• Package Type: TO-247
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.062 Ohm
• Temperature, Operating, Maximum: +150 °C
• Time, Turn-off Delay: 17 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2659-5

ELECTRICAL CHARACTERISTICS (T
Table 6. Off
Table 7. On
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 8. Dynamic
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 9. Switching On
Table 10. Switching Off
V
Symbol
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
td(on)
g
t
I
I
C
DS(on)
C
r(Voff)
GS(th)
C
Q
Q
DSS
GSS
fs
Q
tr
t
oss
t
iss
rss
gd
c
gs
f
g
(1)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
(1)
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
V
V
V
I
V
V
V
V
V
V
V
V
D
V
GS
GS
GS
DS
DS
DS
DS
DS
DD
DD
DD
GS
= 250 µA V
case
= Max Rating
= Max Rating Tc = 125 °C
= ± 30 V
= V
= 10V; I
> I
= 25 V; f = 1 MHz; V
= 100 V; I
= 10 V (see test circuit, Figure 16)
= 160 V; I
= 160 V; I
= 10 V (see test circuit, Figure 18)
D(on)
= 25°C unless otherwise specified)
GS
; I
x R
Test Conditions
Test Conditions
D
Test Conditions
Test Conditions
Test Conditions
D
GS
= 17 A
D
D
D
= 250 µA
DS(on)max
= 17 A; R
= 34 A; V
= 34 A; R
= 0
; I
GS
GS
G
G
D
= 4.7 Ω
= 4.7 Ω
= 0
= 17 A
= 10 V
Min.
Min.
Min.
Min.
Min.
200
3
8
0.062
2400
Typ.
Typ.
Typ.
Typ.
Typ.
650
17
90
30
40
60
19
29
17
18
35
4
STW34NB20
± 100
0.075
3300
Max.
Max.
Max.
Max.
Max.
900
130
10
40
55
80
23
24
47
1
5
Unit
Unit
Unit
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
3/10