IXTH48P20P IXYS, IXTH48P20P Datasheet

MOSFET P-CH 200V 48A TO-247

IXTH48P20P

Manufacturer Part Number
IXTH48P20P
Description
MOSFET P-CH 200V 48A TO-247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTH48P20P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
103nC @ 10V
Input Capacitance (ciss) @ Vds
5400pF @ 25V
Power - Max
462W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
-200
Id(cont), Tc=25°c, (a)
-48
Rds(on), Max, Tj=25°c, (?)
0.085
Ciss, Typ, (pf)
5400
Qg, Typ, (nc)
103
Trr, Typ, (ns)
260
Pd, (w)
462
Rthjc, Max, (k/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TO-268
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-247, TO-3P)
Mounting force (PLUS220)
TO-247
V
V
V
V
V
V
Test Conditions
S
TM
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 0V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
D
= - 250 μA
D
≤ V
= - 250μA
DS
= 0.5 • I
DSS
= 0V
, T
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
JM
= 125°C
IXTH48P20P
IXTT48P20P
11..65 / 2.5..14.6
- 55 ... +150
- 55 ... +150
- 200
- 2.5
Maximum Ratings
Characteristic Values
1.13 / 10
Min.
- 200
- 200
-144
- 48
- 48
±20
±30
462
150
300
260
2.5
10
Typ.
6
5
- 200 μA
±100 nA
- 4.5
Nm/lb.in.
- 25 μA
Max.
85 mΩ
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
J
V
I
R
TO-247 (IXTH)
G = Gate
S = Source
Features:
Applications:
Advantages:
TO-268 (IXTT)
D25
International standard packages
Avalanche Rated
Rugged PolarP
Low package inductance
- easy to drive and to protect
High side switching
Push-pull amplifiers
DC Choppers
Current regulators
Automatic test equipment
Low gate charge results in simple
drive requirement
High power density
Fast switching
Easy to parallel
DS(on)
DSS
G
D
S
G
≤ ≤ ≤ ≤ ≤
=
=
S
D = Drain
TAB = Drain
TM
- 200V
- 48A
process
85mΩ Ω Ω Ω Ω
(TAB)
(TAB)
DS99981(6/08)

Related parts for IXTH48P20P

IXTH48P20P Summary of contents

Page 1

... GSS DSS DS DSS -10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH48P20P IXTT48P20P Maximum Ratings - 200 = 1MΩ - 200 GS ±20 ± -144 2.5 ≤ 150° 462 - 55 ... +150 150 - 55 ... +150 300 260 1. 11..65 / 2.5..14.6 ...

Page 2

... Q 5.89 R 4.32 - 192 A - 3.3 V TO-268 (IXTT) Outline ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTH48P20P IXTT48P20P ∅ Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 ...

Page 3

... Fig. 2. Extended Output Characteristics @ 25º -10V -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 48A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature - -50 - Degrees Centigrade J IXTH48P20P IXTT48P20P -21 -24 -27 - 24A vs 24A D 100 125 150 100 125 150 ...

Page 4

... Fig. 8. Transconductance 0 -10 -20 -30 -40 - Amperes D Fig. 10. Gate Charge V = -100V 24A -1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on 100 V - Volts DS IXTH48P20P IXTT48P20P 40ºC J 25ºC 125ºC -60 -70 -80 - 100 110 T = 150º 25ºC C Single Pulse 100µs 1ms 10ms 100ms - 1000 ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTH48P20P IXTT48P20P 0.1 1 IXYS REF: T_48P20P(B7) 5-13-08 10 ...

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