IXTH48P20P IXYS, IXTH48P20P Datasheet - Page 3

• Manufacturer Part Number: IXTH48P20P
• Description: MOSFET P-CH 200V 48A TO-247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTH48P20P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 103nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 25V
• Power - Max: 462W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -48
• Rds(on), Max, Tj=25°c, (?): 0.085
• Ciss, Typ, (pf): 5400
• Qg, Typ, (nc): 103
• Trr, Typ, (ns): 260
• Pd, (w): 462
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
-50
-45
-40
-35
-30
-25
-20
-15
-10
-50
-45
-40
-35
-30
-25
-20
-15
-10
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-5
-5
0
0
0.0
0.0
0
Fig. 5. R
V
-0.5
GS
-1.0
-20
= -10V
Fig. 1. Output Characteristics
-1.0
Fig. 3. Output Characteristics
-2.0
-40
DS(on)
-1.5
-3.0
-60
Drain Current
Normalized to I
I
D
V
V
-2.0
@ 125ºC
@ 25ºC
DS
DS
- Amperes
-4.0
V
- Volts
-80
- Volts
GS
-2.5
V
= -10V
GS
- 9V
- 8V
-5.0
-100
= -10V
-3.0
- 9V
- 8V
T
D
J
- 7V
- 6V
- 5V
T
= 125ºC
= - 24A vs.
-6.0
-120
J
-3.5
= 25ºC
- 7V
- 6V
- 5V
-7.0
-140
-4.0
-4.5
-8.0
-160
-160
-140
-120
-100
-80
-60
-40
-20
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-52
-48
-44
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
0
-50
-50
0
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
GS
-3
-25
-25
= -10V
Fig. 6. Maximum Drain Current vs.
-6
DS(on)
0
0
Junction Temperature
T
-9
J
T
Case Temperature
- Degrees Centigrade
J
- Degrees Centigrade
V
Normalized to I
25
25
GS
-12
@ 25ºC
V
= -10V
DS
- 9V
-15
50
50
- Volts
I
D
= - 48A
-18
- 5V
- 8V
- 7V
- 6V
75
75
IXTT48P20P
IXTH48P20P
-21
D
= - 24A vs.
100
100
-24
I
D
= - 24A
125
125
-27
150
150
-30