IXTH48P20P IXYS, IXTH48P20P Datasheet - Page 4

• Manufacturer Part Number: IXTH48P20P
• Description: MOSFET P-CH 200V 48A TO-247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTH48P20P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 103nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 25V
• Power - Max: 462W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -48
• Rds(on), Max, Tj=25°c, (?): 0.085
• Ciss, Typ, (pf): 5400
• Qg, Typ, (nc): 103
• Trr, Typ, (ns): 260
• Pd, (w): 462
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
-90
-80
-70
-60
-50
-40
-30
-20
-10
-160
-140
-120
-100
100
-80
-60
-40
-20
0
-3.5
0
-0.5
0
f
-4.0
= 1 MHz
-1.0
-5
Fig. 9. Forward Voltage Drop of
-4.5
-1.5
-10
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
-5.0
J
-2.0
Intrinsic Diode
-15
= 125ºC
V
V
GS
V
SD
DS
C rss
-5.5
- Volts
-2.5
-20
- Volts
- Volts
C oss
-6.0
-3.0
-25
T
T
J
J
= - 40ºC
C iss
= 25ºC
125ºC
25ºC
-6.5
-3.5
-30
-7.0
-4.0
-35
-7.5
-4.5
-40
-
1,000
-
100
-
-10
60
55
50
45
40
35
30
25
20
15
10
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
5
0
0
1
-
10
0
0
Fig. 12. Forward-Bias Safe Operating Area
R
10
V
I
I
-10
DS(on)
D
G
DS
= - 24A
= -1mA
= -100V
20
Limit
-20
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
-30
Q
40
G
- NanoCoulombs
I
D
V
-40
DS
- Amperes
50
-
100
- Volts
60
DC
-50
70
T
-60
J
100µs
1ms
10ms
100ms
IXTT48P20P
IXTH48P20P
= - 40ºC
80
25ºC
T
T
Single Pulse
-70
125ºC
J
C
= 150ºC
90
= 25ºC
-80
100
-
1000
110
-90