IXTX170P10P IXYS, IXTX170P10P Datasheet - Page 2
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IXTX170P10P
Manufacturer Part Number
IXTX170P10P
Description
MOSFET P-CH 100V 170A PLUS247
Manufacturer
IXYS
Series
PolarP™r
Datasheet
1.IXTX170P10P.pdf
(5 pages)
Specifications of IXTX170P10P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
12600pF @ 25V
Power - Max
890W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
12 mOhms
Forward Transconductance Gfs (max / Min)
58 S / 35 S
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 170 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-170
Rds(on), Max, Tj=25°c, (?)
0.012
Ciss, Typ, (pf)
12600
Qg, Typ, (nc)
240
Trr, Typ, (ns)
176
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= - 85A, V
= - 85A, -di/dt = -100A/µs
= - 50V, V
= -10V, I
= 0V, V
= -10V, V
= 1Ω (External)
= -10V, V
= 0V
DS
GS
D
GS
DS
DS
= - 25V, f = 1MHz
= 0.5 • I
= 0V, Note 1
= 0V
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
D25
, Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
Min.
35
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
4190
-14.2
Typ.
Typ.
1.25
0.15
12.6
176
930
240
120
58
32
75
82
45
45
0.14 °C/W
- 680
Max.
- 3.3
-170
6,404,065 B1
6,534,343
6,583,505
Max.
°C/W
µC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXTK) Outline
PLUS 247
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
TM
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Millimeter
5.45 BSC
(IXTX) Outline
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
7,005,734 B2
7,063,975 B2
IXTK170P10P
21.34
16.13
20.32
IXTX170P10P
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
.045
.024
.819
.620
.780
.150
.170
Min.
.190
.090
.075
.075
.115
.220 0.244
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190