IXTX170P10P IXYS, IXTX170P10P Datasheet - Page 2

• Manufacturer Part Number: IXTX170P10P
• Description: MOSFET P-CH 100V 170A PLUS247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTX170P10P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 12600pF @ 25V
• Power - Max: 890W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Forward Transconductance Gfs (max / Min): 58 S / 35 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 170 A
• Power Dissipation: 890 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -170
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 12600
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): 176
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= - 85A, V
= - 85A, -di/dt = -100A/µs
= - 50V, V
= -10V, I
= 0V, V
= -10V, V
= 1Ω (External)
= -10V, V
= 0V
DS
GS
D
GS
DS
DS
= - 25V, f = 1MHz
= 0.5 • I
= 0V, Note 1
= 0V
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
D25
, Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
Min.
35
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
4190
-14.2
Typ.
Typ.
1.25
0.15
12.6
176
930
240
120
58
32
75
82
45
45
0.14 °C/W
- 680
Max.
- 3.3
-170
6,404,065 B1
6,534,343
6,583,505
Max.
°C/W
µC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXTK) Outline
PLUS 247
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
TM
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Millimeter
5.45 BSC
(IXTX) Outline
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
7,005,734 B2
7,063,975 B2
IXTK170P10P
21.34
16.13
20.32
IXTX170P10P
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
.045
.024
.819
.620
.780
.150
.170
Min.
.190
.090
.075
.075
.115
.220 0.244
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190