IXTX170P10P IXYS, IXTX170P10P Datasheet - Page 5

MOSFET P-CH 100V 170A PLUS247

IXTX170P10P

Manufacturer Part Number
IXTX170P10P
Description
MOSFET P-CH 100V 170A PLUS247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTX170P10P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
12600pF @ 25V
Power - Max
890W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
12 mOhms
Forward Transconductance Gfs (max / Min)
58 S / 35 S
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 170 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-170
Rds(on), Max, Tj=25°c, (?)
0.012
Ciss, Typ, (pf)
12600
Qg, Typ, (nc)
240
Trr, Typ, (ns)
176
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXTK170P10P
IXTX170P10P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_170P10P(B9)03-25-09-C

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