IXTX170P10P IXYS, IXTX170P10P Datasheet - Page 3
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IXTX170P10P
Manufacturer Part Number
IXTX170P10P
Description
MOSFET P-CH 100V 170A PLUS247
Manufacturer
IXYS
Series
PolarP™r
Datasheet
1.IXTX170P10P.pdf
(5 pages)
Specifications of IXTX170P10P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
12600pF @ 25V
Power - Max
890W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
12 mOhms
Forward Transconductance Gfs (max / Min)
58 S / 35 S
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 170 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-170
Rds(on), Max, Tj=25°c, (?)
0.012
Ciss, Typ, (pf)
12600
Qg, Typ, (nc)
240
Trr, Typ, (ns)
176
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2009 IXYS CORPORATION, All Rights Reserved
-180
-160
-140
-120
-100
-180
-160
-140
-120
-100
-80
-60
-40
-20
-80
-60
-40
-20
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
0
0.0
0.0
0
Fig. 5. R
V
GS
-0.5
-40
= -10V
-0.4
-15V
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
- - - -
-1.0
-80
-0.8
V
Drain Current
Normalized to I
GS
I
-120
-1.5
D
= -15V
V
V
@ 125ºC
@ 25ºC
DS
- Amperes
-10V
- 9V
DS
V
-1.2
GS
- Volts
- Volts
= -15V
-160
-2.0
-10V
- 9V
-1.6
T
-200
-2.5
D
J
= 125ºC
= - 85A vs.
-2.0
- 8V
- 7V
- 6V
- 5V
-3.0
-240
T
- 8V
- 7V
- 6V
- 5V
J
= 25ºC
-2.4
-3.5
-280
-300
-270
-240
-210
-180
-150
-120
-90
-60
-30
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0
-50
0
-50
V
GS
External Lead Current Limit
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
-1
= -15V
GS
-25
-10V
-25
= -10V
Fig. 6. Maximum Drain Current vs.
-2
DS(on)
0
0
-3
Junction Temperature
T
J
Case Temperature
- Degrees Centigrade
T
J
-4
Normalized to I
25
- Degrees Centigrade
25
- 9V
@ 25ºC
V
DS
-5
- 8V
- 7V
- 6V
- 5V
50
- Volts
I
50
D
= -170A
-6
75
75
-7
IXTK170P10P
IXTX170P10P
D
-8
= - 85A vs.
I
100
100
D
= - 85A
-9
125
125
-10
150
150
-11