2SK3564(Q) Toshiba, 2SK3564(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK3564(Q)
• Description: MOSFET N-CH 900V 3A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3564(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220 (SIS)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 Ohm @10V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 400 W
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK3564Q

0.01
0.1
10
0.01
4
3
2
1
0
6
5
4
3
2
1
0
1
0
0
COMMON SOURCE
V DS = 20 V
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
4
2
DRAIN CURRENT I
100
0.1
8
4
⎪Y
I
I
D
D
fs
– V
– V
12
⎪ – I
6
Tc = −55°C
8
25
DS
GS
Tc = −55°C
D
100
COMMON SOURCE
V DS = 20 V
PULSE TEST
16
10
8
1
D
6
V GS = 4.5 V
GS
(A)
DS
20
10
4.75
5.25
25
5.5
(V)
5
(V)
24
12
10
3
25
20
15
10
10
0.01
5
4
3
2
1
0
5
0
5
3
1
0
0
COMMON SOURCE
Tc = 25°C
PULSE TEST
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
COMMON SOURCE
Tc = 25°C
PULSE TEST
4
DRAIN CURRENT I
10
0.1
R
V
DS (ON)
8
I
DS
D
– V
20
– V
10
DS
V GS = 10 V
GS
– I
12
COMMON SOURCE
Tc = 25℃
PULSE TEST
D
1
D
I D = 3 A
30
GS
(A)
8
6
DS
5.5
V GS = 4.5 V
16
4.75
5.25
5
1.5
0.8
(V)
2009-09-29
(V)
2SK3564
40
20
10