BSP220,115 NXP Semiconductors, BSP220,115 Datasheet - Page 6

• Manufacturer Part Number: BSP220,115
• Description: MOSFET P-CH 200V 225MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP220,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 225mA
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.225 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934000490115::BSP220 T/R::BSP220 T/R

Philips Semiconductors
April 1995
handbook, halfpage
handbook, halfpage
P-channel enhancement mode vertical
D-MOS transistor
Fig.6
Fig.8
(pF)
(A)
160
120
I D
0.8
0.6
0.4
0.2
C
80
40
0
1
0
0
0
Typical transfer characteristic; V
T
Typical capacitances as a function of
drain-source voltage; V
T
j
j
= 25 C.
= 25 C.
2
5
10
4
15
6
GS
= 0; f = 1 MHz;
20
8
V DS (V)
V GS (V)
C iss
C rss
C oss
MDA734
MDA707
DS
= 10 V;
25
10
6
handbook, halfpage
handbook, halfpage
Fig.7
Fig.9
(mA)
I D
10
10
2.5
1.5
0.5
10
k
2
1
0
3
2
50
8
Typical on-resistance as a function of drain
current; T
Temperature coefficient of drain-source
on-resistance;
typical R
k
=
12
---------------------------------------------- ;
R
V GS = 10 V
0
DS on
R
j
DS(on)
DS on
= 25 C.
16
5 V
4 V
at 25 C
at 200 mA/ 10 V.
50
at T
20
j
Product specification
100
24
R DSon ( )
T j ( C)
BSP220
MDA710
MDA708
150
28