BSP220,115 NXP Semiconductors, BSP220,115 Datasheet - Page 8

• Manufacturer Part Number: BSP220,115
• Description: MOSFET P-CH 200V 225MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP220,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 225mA
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.225 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934000490115::BSP220 T/R::BSP220 T/R

Philips Semiconductors
PACKAGE OUTLINE
April 1995
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
P-channel enhancement mode vertical
D-MOS transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
1
e
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
B
scale
1
EIAJ
8
2
c
7.3
6.7
H
E
4 mm
A
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
Product specification
X
ISSUE DATE
BSP220
96-11-11
97-02-28
v
A
M
A
SOT223