BSP220,115 NXP Semiconductors, BSP220,115 Datasheet - Page 7

• Manufacturer Part Number: BSP220,115
• Description: MOSFET P-CH 200V 225MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP220,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 225mA
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.225 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934000490115::BSP220 T/R::BSP220 T/R

Philips Semiconductors
April 1995
handbook, halfpage
P-channel enhancement mode vertical
D-MOS transistor
Fig.10 Temperature coefficient of gate-source
1.1
0.9
0.8
0.7
k
1
50
threshold voltage;
typical -V
k
=
-------------------------------------------- - ;
V
GS th
V
0
GS th
GS(th)
at 25 C
at -1 mA.
at T
50
j
100
T j ( C)
MDA711
150
7
Product specification
BSP220