2N7002P,215 NXP Semiconductors, 2N7002P,215 Datasheet - Page 4

• Manufacturer Part Number: 2N7002P,215
• Description: MOSFET N-CH SGL 60V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002P,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Gate Charge Qg: 0.6 nC
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.36 A
• Power Dissipation: 420 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064132215

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
2N7002P
Product data sheet
Symbol
R
R
Fig 4.
Fig 5.
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
10
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
−3
Thermal characteristics
duty cycle = 1
duty cycle = 1
0.25
0.25
0.5
0.1
0.5
0.1
0
0
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
0.75
0.33
0.05
0.02
0.01
0.75
0.33
0.05
0.02
0.01
0.2
0.2
10
10
−2
−2
Conditions
in free air
All information provided in this document is subject to legal disclaimers.
10
10
−1
−1
2
Rev. 02 — 29 July 2010
1
1
60 V, 360 mA N-channel Trench MOSFET
10
10
[1]
[2]
2
.
Min
-
-
-
10
10
2
2
Typ
310
260
-
t
t
2N7002P
p
p
© NXP B.V. 2010. All rights reserved.
(s)
(s)
017aaa015
017aaa016
Max
370
300
115
10
10
3
3
Unit
K/W
K/W
K/W
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