2N7002P,215 NXP Semiconductors, 2N7002P,215 Datasheet - Page 7

• Manufacturer Part Number: 2N7002P,215
• Description: MOSFET N-CH SGL 60V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002P,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Gate Charge Qg: 0.6 nC
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.36 A
• Power Dissipation: 420 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064132215

NXP Semiconductors
2N7002P
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.0
1.0
0.0
−60
0.0
function of gate-source voltage; typical values
ambient temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
D
DS
= 0.25 mA; V
> I
amb
amb
D
1.0
= 25 °C
= 150 °C
× R
0
DSon
DS
2.0
(2)
(1)
(2)
(3)
= V
60
GS
(1)
3.0
(1)
120
(2)
4.0
T
All information provided in this document is subject to legal disclaimers.
amb
017aaa021
017aaa023
V
GS
(°C)
(V)
180
5.0
Rev. 02 — 29 July 2010
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
2.4
1.8
1.2
0.6
0.0
10
1
2
10
−60
a function of ambient temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1) C
(2) C
(3) C
−1
60 V, 360 mA N-channel Trench MOSFET
iss
oss
rss
0
GS
1
(1)
(2)
(3)
= 0 V
60
10
120
2N7002P
V
© NXP B.V. 2010. All rights reserved.
T
DS
amb
017aaa022
017aaa024
(V)
(°C)
180
10
2
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