2N7002P,215 NXP Semiconductors, 2N7002P,215 Datasheet - Page 5

• Manufacturer Part Number: 2N7002P,215
• Description: MOSFET N-CH SGL 60V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002P,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Gate Charge Qg: 0.6 nC
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.36 A
• Power Dissipation: 420 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064132215

NXP Semiconductors
7. Characteristics
Table 7.
2N7002P
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
g
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
forward
Conditions
I
I
V
V
V
V
V
t
V
t
V
t
I
T
V
T
V
R
I
All information provided in this document is subject to legal disclaimers.
D
D
p
p
p
D
S
j
j
DS
DS
GS
GS
GS
GS
DS
GS
DS
G(ext)
≤ 300 µs; δ ≤ 0.01 ; T
≤ 300 µs; δ ≤ 0.01 ; T
≤ 300 µs; δ ≤ 0.01 ; T
= 10 µA; V
= 250 µA; V
= 300 mA; V
= 25 °C
= 25 °C
= 115 mA; V
= 60 V; V
= 60 V; V
= 10 V; I
= 50 V; R
= 20 V; V
= -20 V; V
= 5 V; I
= 10 V; I
= 0 V; V
= 6 Ω; T
Rev. 02 — 29 July 2010
D
DS
D
D
GS
= 50 mA; pulsed;
GS
GS
DS
L
DS
DS
= 500 mA; pulsed;
= 200 mA; pulsed;
GS
DS
j
= 250 Ω; V
= 10 V; f = 1 MHz;
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 30 V; V
GS
; T
j
j
j
j
= 25 °C
= 25 °C
= 25 °C
j
j
j
= 25 °C
j
j
= 25 °C
= 150 °C
= 25 °C
j
GS
= 25 °C
= 25 °C
= 25 °C
GS
= 10 V;
= 4.5 V;
60 V, 360 mA N-channel Trench MOSFET
Min
60
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.47
Typ
-
1.75
-
-
-
-
1.3
1
400
0.6
0.2
0.2
30
7
4
3
4
10
5
0.75
2N7002P
© NXP B.V. 2010. All rights reserved.
Max
-
2.4
1
10
100
100
2
1.6
-
0.8
-
-
50
-
-
6
-
20
-
1.1
Unit
V
V
µA
µA
nA
nA
Ω
Ω
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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