PMF780SN,115 NXP Semiconductors, PMF780SN,115 Datasheet - Page 2

• Manufacturer Part Number: PMF780SN,115
• Description: MOSFET N-CH 60V 570MA SOT-323
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMF780SN,115

• Package / Case: SC-70-3, SOT-323-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 920 mOhm @ 300mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 570mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 1.05nC @ 10V
• Input Capacitance (ciss) @ Vds: 23pF @ 30V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.92 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.57 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057708115; PMF780SN T/R; PMF780SN T/R

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 12764
Product data
Type number
PMF780SN
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
Ordering information
Limiting values
Package
Name
SC-70
Description
Plastic surface mounted package; 3 leads
Conditions
25 C
25 C
T
T
T
T
Rev. 01 — 10 February 2004
sp
sp
sp
sp
sp
sp
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
T
T
j
j
150 C
150 C; R
Figure 1
GS
GS
= 10 V;
= 10 V;
p
p
GS
N-channel TrenchMOS™ standard level FET
10 s;
10 s
Figure 2
= 20 k
Figure 2
Figure 3
and
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PMF780SN
Min
-
-
-
-
-
-
-
-
-
55
55
Max
60
60
0.57
0.36
1.15
0.56
+150
+150
0.47
0.94
20
Version
SOT323
2 of 12
Unit
V
V
V
A
A
A
W
A
A
C
C