PMF780SN,115 NXP Semiconductors, PMF780SN,115 Datasheet - Page 5

• Manufacturer Part Number: PMF780SN,115
• Description: MOSFET N-CH 60V 570MA SOT-323
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMF780SN,115

• Package / Case: SC-70-3, SOT-323-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 920 mOhm @ 300mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 570mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 1.05nC @ 10V
• Input Capacitance (ciss) @ Vds: 23pF @ 30V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.92 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.57 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057708115; PMF780SN T/R; PMF780SN T/R

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 12764
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
Characteristics
Conditions
I
I
V
V
V
V
I
V
V
D
D
D
S
Rev. 01 — 10 February 2004
DS
GS
GS
GS
GS
DD
T
T
T
T
T
T
T
T
T
= 0.3 A; V
= 250 A; V
= 0.25 mA; V
= 1 A; V
j
j
j
j
j
j
j
j
j
= 60 V; V
= 20 V; V
= 10 V; I
= 4.5 V; I
= 0 V; V
= 30 V; R
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
DD
GS
DS
D
D
= 30 V; V
GS
L
GS
= 0.3 A;
DS
= 0.075 A;
= 30 ; V
= 0 V;
DS
= 30 V; f = 1 MHz;
= 0 V
= 0 V
= 0 V
= V
Figure 12
GS
N-channel TrenchMOS™ standard level FET
GS
Figure 7
;
GS
Figure 9
= 10 V;
Figure 7
= 10 V; R
and
Figure 13
Figure 11
and
8
G
= 6
8
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PMF780SN
Min
60
55
1
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
2
-
-
0.05
-
10
780
1445 1700 m
1100 1400 m
1.05
0.2
0.22
23
5
3.5
2
4
5
2.2
0.83
Max
-
-
-
-
3.5
1
100
100
920
-
-
-
-
-
-
-
-
-
-
1.2
5 of 12
Unit
V
V
V
V
V
nA
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
A
A