PMF780SN,115 NXP Semiconductors, PMF780SN,115 Datasheet - Page 7

• Manufacturer Part Number: PMF780SN,115
• Description: MOSFET N-CH 60V 570MA SOT-323
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMF780SN,115

• Package / Case: SC-70-3, SOT-323-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 920 mOhm @ 300mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 570mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 1.05nC @ 10V
• Input Capacitance (ciss) @ Vds: 23pF @ 30V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.92 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.57 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057708115; PMF780SN T/R; PMF780SN T/R

Philips Semiconductors
9397 750 12764
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
GS
2.4
1.8
1.2
0.6
= 0.25 mA; V
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
0
= V
GS
typ
min
60
(pF)
C
10 2
10
120
1
10 -1
T j ( C)
03aa34
Rev. 01 — 10 February 2004
180
1
Fig 10. Sub-threshold drain current as a function of
10
(A)
T
I D
10 -3
10 -4
10 -5
10 -6
1E-7
1E-8
j
= 25 C; V
N-channel TrenchMOS™ standard level FET
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03an92
DS
10 2
0.5
= 5 V
min
1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1.5
PMF780SN
typ
2
V GS (V)
03an32
2.5
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