PHT6NQ10T,135 NXP Semiconductors, PHT6NQ10T,135 Datasheet - Page 4

• Manufacturer Part Number: PHT6NQ10T,135
• Description: MOSFET N-CH 100V 6.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHT6NQ10T,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 25V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055876135; PHT6NQ10T /T3; PHT6NQ10T /T3

Philips Semiconductors
August 1999
N-channel TrenchMOS
Fig.9. Normalised drain-source on-state resistance.
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
6
5
4
3
2
1
0
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-60
0
Fig.8. Typical transconductance, T
Drain current, ID (A)
VDS > ID X RDS(ON)
0
Normalised On-state Resistance
Transconductance, gfs (S)
VDS > ID X RDS(ON)
Fig.7. Typical transfer characteristics.
-40
-20
1
1
R
Junction temperature, Tj (C)
0
DS(ON)
Gate-source voltage, VGS (V)
2
20
2
Drain current, ID (A)
/R
I
D
g
40
fs
= f(V
DS(ON)25 ˚C
= f(I
60
3
3
GS
D
)
150 C
80
)
= f(T
100 120 140 160 180
4
4
transistor
j
)
j
Tj = 25 C
Tj = 25 C
= 25 ˚C .
5
5
150 C
6
6
4
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
10000
4.5
3.5
2.5
1.5
0.5
1000
4
3
2
1
0
100
V
-60 -40 -20
Fig.12. Typical capacitances, C
10
I
C = f(V
GS(TO)
Threshold Voltage, VGS(TO) (V)
D
0.1
= f(V
Capacitances, Ciss, Coss, Crss (pF)
0
Fig.11. Sub-threshold drain current.
Drain current, ID (A)
Fig.10. Gate threshold voltage.
= f(T
0.5
GS)
DS
); conditions: V
; conditions: T
j
); conditions: I
0
1
Gate-source voltage, VGS (V)
minimum
Junction Temperature, Tj (C)
Drain-Source Voltage, VDS (V)
20
1.5
1
40
2
typical
60
minimum
2.5
j
typical
GS
D
= 25 ˚C; V
80
maximum
= 1 mA; V
= 0 V; f = 1 MHz
3
Product specification
100 120 140 160 180
10
PHT6NQ10T
3.5
iss
, C
maximum
DS
DS
4
oss
= V
, C
= V
Rev 1.000
Crss
4.5
Coss
Ciss
GS
rss
GS
.
100
5