BUK9623-75A,118 NXP Semiconductors, BUK9623-75A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9623-75A,118
• Description: MOSFET N-CH 75V 53A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9623-75A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 138W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 53 A
• Power Dissipation: 138000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056476118; BUK9623-75A /T3; BUK9623-75A /T3

Table 5:
T
Philips Semiconductors
9397 750 07582
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
(mOhm)
function of drain-source voltage; typical values.
of drain current; typical values.
R DSon
I D
(A)
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
200
180
160
140
120
100
80
60
40
20
0
60
55
50
45
40
35
30
25
20
15
10
0
p
10
= 300 s
V GS = 10(V)
30
2
V GS = 3 (V)
50
…continued
4
70
3.2
8
3.4
90
6
3.6
110
3.8
130
4
8
Conditions
I
Figure 15
I
V
V DS (V)
S
S
GS
03nb16
= 25 A; V
= 46 A; dI
150
03nb17
I D (A)
= 10 V; V
10
5
Rev. 01 — 10 October 2000
170
7
6
5
4
3
2
GS
S
BUK9523-75A; BUK9623-75A
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
(mOhm)
a
--------------------------- -
R
R DSon
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
DSon 25 C
R
-60
DSon
35
30
25
20
15
10
D
Min
= 25 A
2
-20
20
4
TrenchMOS™ logic level FET
Typ
0.85
49
115
60
© Philips Electronics N.V. 2000. All rights reserved.
6
100
Max
1.2
140
T j ( o C)
8
03nb25
V GS(V)
180
03nb15
10
Unit
V
ns
nC
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