BUK9623-75A,118 NXP Semiconductors, BUK9623-75A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9623-75A,118
• Description: MOSFET N-CH 75V 53A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9623-75A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 138W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 53 A
• Power Dissipation: 138000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056476118; BUK9623-75A /T3; BUK9623-75A /T3

Philips Semiconductors
9397 750 07582
Product specification
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
function of gate-source voltage; typical values.
= 25 V
= 0 V
I D
(A)
45
40
35
30
25
20
15
10
5
0
0.0
0.5
1.0
T j = 175
1.5
O
C
2.0
T j = 25
I S
(A)
2.5
60
50
40
30
20
10
V GS (V)
0
03nb14
0.0
O
C
3.0
Rev. 01 — 10 October 2000
0.2
BUK9523-75A; BUK9623-75A
0.4
T j = 175
0.6
Fig 14. Gate-source voltage as a function of turn-on
O
C
T
0.8
j
= 25 C; I
gate charge; typical values.
T j = 25
V GS
(V)
1.0
V SD (V)
4.5
3.5
2.5
1.5
0.5
03nb11
5
4
3
2
1
0
O
C
0
D
1.2
= 25 A
V DS = 14(V)
10
TrenchMOS™ logic level FET
20
© Philips Electronics N.V. 2000. All rights reserved.
30
V DS = 60(V)
40
Q G (nC)
03nb12
50
8 of 15