RP1E100RPTR Rohm Semiconductor, RP1E100RPTR Datasheet

MOSFET P-CH 30V 10A MPT6

RP1E100RPTR

Manufacturer Part Number
RP1E100RPTR
Description
MOSFET P-CH 30V 10A MPT6
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RP1E100RPTR

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12.6 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
39nC @ 5V
Input Capacitance (ciss) @ Vds
3600pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
MPT6
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
14 mOhms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
- 30 V
Continuous Drain Current
10 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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©2010 ROHM Co., Ltd. All rights reserved.
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
*Mounted on a ceramic board.
Silicon P-channel MOSFET
1) Low On-resistance.
2) High power package.
3) 4V drive.
Switching
RP1E100RP
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
Channel to Ambient
4V Drive Pch MOSFET
 Structure
Features
 Application
 Packaging specifications
 Absolute maximum ratings (Ta = 25C)
 Thermal resistance
RP1E100RP
Type
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Rth (ch-a)
Symbol
Symbol
Taping
1000
V
V
Tstg
Tch
TR
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
*1
*1
*2
*
55 to +150
Limits
Limits
1.6
62.5
30
40
150
20
10
40
2.0
1/5
C / W
Unit
Unit
C
C
W
V
V
A
A
A
A
 Dimensions (Unit : mm)
 Inner circuit
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
(Single)
MPT6
(6)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
(6)
(1)
(5)
(2)
(4)
(3)
(5)
(2)
∗1
2010.07 - Rev.B
(4)
(3)

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RP1E100RPTR Summary of contents

Page 1

Drive Pch MOSFET RP1E100RP  Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) High power package drive.  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E100RP  Absolute maximum ratings (Ta ...

Page 2

RP1E100RP  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage V Static drain-source on-state R resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on ...

Page 3

RP1E100RP  Electrical characteristic curves -10V -4. -4. -3. -2. Ta=25℃ 2 Pulsed 0 0.0 0.2 ...

Page 4

RP1E100RP 100 Ta=25℃ Pulsed I = -10. -5. GATE-SOURCE VOLTAGE :V [V] GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 Ciss 1000 Crss Coss 100 Ta=25℃ f=1MHz ...

Page 5

RP1E100RP  Measurement circuits D.U. Fig.1-1 Switching Time Measurement Circuit G(Const.) D.U. Fig.2-1 Gate Charge ...

Page 6

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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