RP1E100RPTR Rohm Semiconductor, RP1E100RPTR Datasheet - Page 3

• Manufacturer Part Number: RP1E100RPTR
• Description: MOSFET P-CH 30V 10A MPT6
• Manufacturer: Rohm Semiconductor

Specifications of RP1E100RPTR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 39nC @ 5V
• Input Capacitance (ciss) @ Vds: 3600pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: MPT6
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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 Electrical characteristic curves
RP1E100RP
100
100
20
18
16
14
12
10
Fig.1 Typical output characteristics(Ⅰ)
10
10
8
6
4
2
0
DRAIN-SOURCE VOLTAGE : V
1
Fig.4 Static Drain-Source On-State
1
0.0
0.1
0.1
Ta=25℃
Pulsed
V
Pulsed
Resistance vs. Drain Current( Ⅰ)
GS
Fig.7 Static Drain-Source On-State
DRAIN-CURRENT : -I
= -4.0V
DRAIN-CURRENT : I
0.2
Resistance vs. Drain
V
GS
1
1
= -2.8V
0.4
V
V
V
GS
GS
GS
V
= -10V
= -4.5V
= -4.0V
0.6
GS
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
= -3.2V
10
10
V
V
V
D
GS
GS
GS
[A]
Ta=25℃
Pulsed
D
= -4.0V
= -4.5V
= -10V
[A]
0.8
DS
[V]
100
100
1.0
100
20
18
16
14
12
10
100
10
10
8
6
4
2
0
1
1
0
0.1
0.1
0
Fig.2 Typical output characteristics(Ⅱ)
Fig.5 Static Drain-Source On-State
V
Pulsed
V
Pulsed
DS
DS
DRAIN-SOURCE VOLTAGE : V
=-10V
=-10V
Fig.8 Forward Transfer Admittance
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅱ)
2
DRAIN-CURRENT :I
V
GS
vs. Drain Current
1
=2.4V
1
4
V
V
V
3/5
GS
GS
GS
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
= -10V
= -4.5V
= -4.0V
V
V
6
GS
GS
10
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
10
= -3.2V
= -2.8V
Ta=25℃
Pulsed
D
[A]
D
8
[A]
DS
100
10
100
[V]
0.01
100
0.01
100
100
0.1
10
0.1
10
10
1
1
1
1.0
0.0
0.1
SOURCE-DRAIN VOLTAGE :V
V
Pulsed
V
Pulsed
V
Pulsed
Fig.3 Typical Transfer Characteristics
Fig.9 Reverse Drain Current
Fig.6 Static Drain-Source On-State
DS
GS
GS
Ta= -25℃
Ta=125℃
Ta= -25℃
GATE-SOURCE VOLTAGE : V
Ta=125℃
Ta=75℃
Ta=25℃
= -4.5V
=-10V
=0V
Ta=75℃
Ta=25℃
0.2
Resistance vs. Drain Current( Ⅲ)
1.5
DRAIN-CURRENT : I
vs. Sourse-Drain Voltage
0.4
1
2.0
0.6
0.8
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
10
2010.07 - Rev.B
2.5
1.0
D
[A]
SD
Data Sheet
GS
[V]
100
3.0
1.2
[V]