RP1E100RPTR Rohm Semiconductor, RP1E100RPTR Datasheet - Page 5

• Manufacturer Part Number: RP1E100RPTR
• Description: MOSFET P-CH 30V 10A MPT6
• Manufacturer: Rohm Semiconductor

Specifications of RP1E100RPTR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 39nC @ 5V
• Input Capacitance (ciss) @ Vds: 3600pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: MPT6
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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 Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.2-1 Gate Charge Measurement Circuit
I
G(Const.)
RP1E100RP
R
R
G
G
V
V
GS
GS
D.U.T.
D.U.T.
I
I
D
D
R
R
V
V
L
DD
L
DD
V
V
DS
DS
V
V
V
GS
DS
GS
Fig.2-2 Gate Charge Waveform
V
G
t
d(on)
Q
Fig.1-2 Switching Waveforms
gs
10%
t
50%
on
Q
90%
5/5
gd
Pulse Width
Q
t
10%
r
g
90%
t
d(off)
Charge
t
off
50%
t
90%
f
10%
2010.07 - Rev.B
Data Sheet