RP1E100RPTR Rohm Semiconductor, RP1E100RPTR Datasheet - Page 4

• Manufacturer Part Number: RP1E100RPTR
• Description: MOSFET P-CH 30V 10A MPT6
• Manufacturer: Rohm Semiconductor

Specifications of RP1E100RPTR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 39nC @ 5V
• Input Capacitance (ciss) @ Vds: 3600pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: MPT6
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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RP1E100RP
10000
0.001
1000
0.01
100
100
0.1
50
10
10
0
Fig.10 Static Drain-Source On-State
1
0.001
0.01
0
GATE-SOURCE VOLTAGE :V
Resistance vs. Gate Source Voltage
Fig.13 Typical Capacitance
DRAIN-SOURCE VOLTAGE : V
Crss
0.1
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
Coss
0.01
vs. Drain-Source Voltage
Ciss
I
5
D
= -5.0A
I
D
= -10.0A
1
0.1
10
Ta=25℃
Pulsed
PULSE WIDTH : Pw(s)
Ta=25℃
f=1MHz
V
10
GS
=0V
GS
[V]
Ta = 25℃
Single Pulse : 1Unit
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）
Rth（ch-a） = 62.5 ℃/W
100
15
<Mounted on a CERAMIC board>
1
DS
[V]
10000
10
1000
1000
100
0.01
100
10
0.1
10
1
1
0.01
0.1
Ta = 25℃
Single Pulse
Mounted on a CERAMIC board
Operation in this area is limited by
R
DRAIN-SOURCE VOLTAGE : V
DS
Fig.14 Maximum Safe Operating Aera
100
(ON)
tr
0.1
DRAIN-CURRENT : I
Fig.11 Switching
td(off)
1
Characteristics
1000
td(on)
4/5
1
tf
10
Ta=25℃
V
V
R
Pulsed
DD
GS
G
10
=10Ω
= -15V
= -10V
D
PW=100s
PW=1ms
PW = 10ms
DC operation
[A]
100
100
DS
[V]
10
8
6
4
2
0
0
Ta=25℃
V
I
R
Pulsed
Fig.12 Dynamic Input Characteristics
D
DD
= -10A
G
=10Ω
10
TOTAL GATE CHARGE : Qg [nC]
= -15V
20
30
40
2010.07 - Rev.B
50
60
Data Sheet
70