BUK7213-40A,118 NXP Semiconductors, BUK7213-40A,118 Datasheet

no-image

BUK7213-40A,118

Manufacturer Part Number
BUK7213-40A,118
Description
MOSFET N-CH TRENCH 40V TO252
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7213-40A,118

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
55A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
2245pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058199118
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT428 (D-PAK), simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
drain (d)
M3D300
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General-Purpose Automotive TrenchMOS™ technology.
BUK7213-40A
TrenchMOS™ standard level FET
Rev. 01 — 29 January 2004
Very low on-state resistance
175 C rated
Automotive systems
Motors, lamps and solenoids
V
I
D
DS
78 A
40 V
Simplified outline
Top view
SOT428 (D-PAK)
1
mb
2
MBK091
3
Q101 compliant
Standard level compatible
12 V loads
General purpose power switching
R
P
Symbol
tot
DSon
150 W.
10.3 m (typ)
MBB076
g
d
s
Product data

Related parts for BUK7213-40A,118

BUK7213-40A,118 Summary of contents

Page 1

... Pinning information Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb drain (d) BUK7213-40A TrenchMOS™ standard level FET Rev. 01 — 29 January 2004 Very low on-state resistance 175 C rated Automotive systems Motors, lamps and solenoids Simplifi ...

Page 2

... Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) Conditions Figure 2 and 100 pulsed Figure Figure pulsed unclamped inductive load starting human body model 100 pF 1.5 k Rev. 01 — 29 January 2004 BUK7213-40A TrenchMOS™ standard level FET Min Max - [ [ [1] Figure 312 p - 150 55 +175 55 +175 [ [ 312 244 ...

Page 3

... 150 200 Fig 2. Continuous drain current as a function of mounting base temperature Rev. 01 — 29 January 2004 BUK7213-40A TrenchMOS™ standard level FET Capped at 55A due to package 0 50 100 150 03np04 100 100 (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 4

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 12486 Product data Conditions Figure 4 vertical in still air; SOT428 package Rev. 01 — 29 January 2004 BUK7213-40A TrenchMOS™ standard level FET Min Typ Max Unit - - 1 K/W - 71.4 - K/W ...

Page 5

... Figure 7 and 175 Figure MHz; Figure 1 measured from drain to centre of die measured from source lead to source bond pad Rev. 01 — 29 January 2004 BUK7213-40A TrenchMOS™ standard level FET Min Typ Max 4 500 - 2 100 - 10 24 1684 2245 - 590 708 - 389 ...

Page 6

... SD voltage t reverse recovery time rr Q recovered charge r 9397 750 12486 Product data Conditions /dt = 100 Rev. 01 — 29 January 2004 BUK7213-40A TrenchMOS™ standard level FET Min Typ Max - 0.85 1 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Unit ...

Page 7

... V DS (V) T Fig 6. Drain-source on-state resistance as a function 03nk28 label (V) 20 200 300 I D (A) Fig 8. Normalized drain source on-state resistance Rev. 01 — 29 January 2004 BUK7213-40A TrenchMOS™ standard level FET gate-source voltage; typical values 1.5 1 0.5 0 -60 ...

Page 8

... Fig 10. Sub-threshold drain current as a function of 03nk24 4000 C (pF) 3000 2000 1000 ( Fig 12. Input, output and reverse transfer capacitances Rev. 01 — 29 January 2004 BUK7213-40A TrenchMOS™ standard level FET min typ max ( gate-source voltage. C iss C oss C rss ( MHz as a function of drain-source voltage ...

Page 9

... Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. 9397 750 12486 Product data 03nk25 (V) T Fig 14. Gate-source voltage as a function of turn-on 100 175 0.0 0.5 1.0 Rev. 01 — 29 January 2004 BUK7213-40A TrenchMOS™ standard level FET ( gate charge; typical values. 03nk22 1 (V) © ...

Page 10

... D E min. 1.1 5.46 0.4 6.22 6.73 4.81 4.0 0.9 5.26 0.2 5.98 6.47 4.45 REFERENCES JEDEC JEITA TO-252 SC-63 Rev. 01 — 29 January 2004 BUK7213-40A TrenchMOS™ standard level FET min. 0.9 10.4 2.95 2.285 4.57 0.5 0.5 9.6 2.55 EUROPEAN PROJECTION © ...

Page 11

... A 5.65 1. solder lands solder resist 4.57 F occupied area solder paste Rev. 01 — 29 January 2004 BUK7213-40A TrenchMOS™ standard level FET 1.80 4.725 6.50 6.125 0.30 1.30 1.40 1.65 MSD060 © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 12

... Revision history Table 6: Revision history Rev Date CPCN Description 01 20040129 - Product data; initial version (9397 750 12486) 9397 750 12486 Product data Rev. 01 — 29 January 2004 BUK7213-40A TrenchMOS™ standard level FET © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 13

... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 29 January 2004 Rev. 01 — 29 January 2004 BUK7213-40A BUK7213-40A TrenchMOS™ standard level FET TrenchMOS™ standard level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 14

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 29 January 2004 Document order number: 9397 750 12486 BUK7213-40A TrenchMOS™ standard level FET ...

Related keywords