BUK7213-40A,118 NXP Semiconductors, BUK7213-40A,118 Datasheet - Page 9

• Manufacturer Part Number: BUK7213-40A,118
• Description: MOSFET N-CH TRENCH 40V TO252
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7213-40A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 2245pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058199118

Philips Semiconductors
9397 750 12486
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
I D
(A)
100
DS
GS
75
50
25
0
function of gate-source voltage; typical values.
= 25 V
= 0 V
0
T j = 175 C
2
4
T j = 25 C
I S
(A)
100
75
50
25
6
0
0.0
V GS (V)
03nk25
T j = 175 C
Rev. 01 — 29 January 2004
8
0.5
Fig 14. Gate-source voltage as a function of turn-on
T j = 25 C
1.0
T
V GS
j
(V)
= 25 C; I
10
8
6
4
2
0
gate charge; typical values.
V SD (V)
0
03nk22
D
= 25 A
10
1.5
TrenchMOS™ standard level FET
V DD = 14 V
20
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BUK7213-40A
30
V DD = 32 V
40
Q G (nC)
03np37
50
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