BUK7213-40A,118 NXP Semiconductors, BUK7213-40A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7213-40A,118
• Description: MOSFET N-CH TRENCH 40V TO252
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7213-40A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 2245pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058199118

Philips Semiconductors
9397 750 12486
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P der
(%)
T
10 3
10 2
120
(A)
I D
mb
10
80
40
P
1
0
function of mounting base temperature.
der
= 25 C; I
0
1
=
Capped at 55 A due to bondwires
---------------------- -
P
limit R DSon = V DS /I D
tot 25 C
P
DM
tot
50
single pulse.
100%
100
150
T mb ( C)
03na19
200
Rev. 01 — 29 January 2004
DC
10
Fig 2. Continuous drain current as a function of
V
100
GS
(A)
I D
75
50
25
0
mounting base temperature.
0
10 V
Capped at 55A due to package
50
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BUK7213-40A
100
t p = 10 s
100 s
1 ms
10 ms
100 ms
V DS (V)
150
T j ( C)
03np04
03np38
10 2
200
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