BUK9510-55A,127 NXP Semiconductors, BUK9510-55A,127 Datasheet - Page 10

• Manufacturer Part Number: BUK9510-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9510-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 5V
• Input Capacitance (ciss) @ Vds: 4307pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 139 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 155 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056851127; BUK9510-55A; BUK9510-55A

Philips Semiconductors
Fig 17. SOT404 (D
9397 750 08555
Product data
Plastic single-ended surface mounted package (Philips version of D
(one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
2
D
-PAK).
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
Rev. 01 — 20 August 2001
10.30
9.70
E
3
0
b
BUK9510-55A; BUK9610-55A
2.54
e
scale
EIAJ
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
mounting
2.60
2.20
2
Q
base
-PAK); 3 leads
L p
A 1
Q
PROJECTION
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
c
EUROPEAN
A
ISSUE DATE
99-06-25
01-02-12
SOT404
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