BUK9510-55A,127 NXP Semiconductors, BUK9510-55A,127 Datasheet - Page 4

• Manufacturer Part Number: BUK9510-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9510-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 5V
• Input Capacitance (ciss) @ Vds: 4307pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 139 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 155 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056851127; BUK9510-55A; BUK9510-55A

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 08555
Product data
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-a)
th(j-mb)
Z th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
10 -1
10 -2
10 -3
(K/W)
1
10 -6
0.2
0.05
Single Shot
0.1
0.02
7.1 Transient thermal impedance
= 0.5
10 -5
10 -4
Rev. 01 — 20 August 2001
BUK9510-55A; BUK9610-55A
Conditions
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
Figure 4
10 -3
10 -2
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
10 -1
P
t p
T
t p (s)
=
Value
60
50
0.75
03nf87
t p
T
t
1
Unit
K/W
K/W
K/W
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