BUK9510-55A,127 NXP Semiconductors, BUK9510-55A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK9510-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9510-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 5V
• Input Capacitance (ciss) @ Vds: 4307pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 139 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 155 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056851127; BUK9510-55A; BUK9510-55A

Philips Semiconductors
Table 5:
T
9397 750 08555
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
R DSon
= 25 C; t
= 25 C
I D
(A)
(m )
350
300
250
200
150
100
function of drain-source voltage; typical values.
of drain current; typical values.
50
25
20
15
10
0
5
0
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
0
V GS (V) =
V GS (V) = 10
p
= 300 s
50
2
3 3.2 3.4 3.6 3.8
100
4
…continued
8
150
6
4
6
200
8
V DS (V)
I D (A)
Conditions
I
Figure 15
I
V
03nd75
S
S
5
GS
2.2
= 25 A; V
= 20 A; dI
4
3
250
10
5
= 10 V; V
Rev. 01 — 20 August 2001
BUK9510-55A; BUK9610-55A
GS
S
/dt = 100 A/ s
= 0 V
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
a
j
R DSon
= 25 C; I
=
(m )
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
1.5
0.5
12
10
2
1
0
---------------------------- -
R
8
6
-60
DSon 25 C
3
R
DSon
D
Min
-
-
-
= 25 A
5
0
7
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
0.85
77
230
60
9
11
120
13
T j (ºC)
Max
1.2
-
-
V GS (V)
03ne89
180
15
Unit
V
ns
nC
6 of 14