BUK9Y19-55B,115 NXP Semiconductors, BUK9Y19-55B,115 Datasheet - Page 5

• Manufacturer Part Number: BUK9Y19-55B,115
• Description: MOSFET N-CH 55V 46A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y19-55B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 46A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.3 mOhm @ 20A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0173 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 46 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058366115::BUK9Y19-55B T/R::BUK9Y19-55B T/R

NXP Semiconductors
6. Characteristics
Table 6.
BUK9Y19-55B_3
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Source-drain diode
V
t
Q
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
DSS
GSS
rr
d(on)
r
d(off)
f
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
source-drain voltage
reverse recovery time I
recovered charge
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
I
T
I
T
I
T
I
see
I
T
V
T
V
V
V
T
V
V
V
see
V
see
I
see
V
T
I
T
V
f = 1 MHz; T
see
V
V
T
D
D
D
D
D
S
S
D
j
j
j
j
j
j
j
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
GS
DS
GS
= 0.25 mA; V
= 25 °C
= 0.25 mA; V
= -55 °C
= 1 mA; V
= -55 °C; see
= 1 mA; V
= 1 mA; V
= 175 °C; see
= 175 °C
= 25 °C
= 25 A; V
= 20 A; dI
= 25 °C
= 25 A; V
= 25 °C; see
= 25 °C
Figure 11
Figure 12
Figure 12
Figure 16
Figure 15
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 4.5 V; I
= 10 V; I
= 5 V; I
= 5 V; I
= -10 V; V
= 0 V; V
= 5 V; R
Rev. 03 — 29 February 2008
D
D
GS
DS
S
DS
j
DS
DS
GS
GS
DS
G(ext)
D
/dt = -100 A/μs;
= 25 °C;
= 20 A; T
D
= 20 A; T
GS
GS
L
and
and
DS
= 20 A; T
= 0 V; T
= 44 V; V
= V
= V
= V
= 20 A; T
Figure 14
= 1.2 Ω;
GS
GS
= 15 V; T
= -15 V;
= 25 V;
Figure 11
Figure 11
= 0 V;
= 0 V; T
= 30 V;
= 10 Ω;
= 0 V;
= 0 V;
GS
13
13
GS
GS
; T
;
;
j
j
j
= 175 °C;
j
= 25 °C;
= 25 °C;
GS
j
= 25 °C;
j
j
j
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 5 V;
Min
55
50
-
1.1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N-channel TrenchMOS logic level FET
BUK9Y19-55B
Typ
-
-
-
1.5
-
-
0.02
2
2
-
14.3
16.3
-
0.85
52
38
18
5
8
1494
217
86
18
44
134
180
Max
-
-
2.3
2
-
500
1
100
100
21
17.3
19
40
1.2
-
-
-
-
-
1992
260
118
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Unit
V
V
V
V
V
μA
μA
nA
nA
mΩ
mΩ
mΩ
mΩ
V
ns
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
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