BUK9Y19-55B,115 NXP Semiconductors, BUK9Y19-55B,115 Datasheet - Page 6

• Manufacturer Part Number: BUK9Y19-55B,115
• Description: MOSFET N-CH 55V 46A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y19-55B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 46A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.3 mOhm @ 20A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0173 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 46 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058366115::BUK9Y19-55B T/R::BUK9Y19-55B T/R

NXP Semiconductors
BUK9Y19-55B_3
Product data sheet
Fig 6. Output characteristics: drain current as a
Fig 8. Sub-threshold drain current as a function of
(A)
(A)
I
I
10
10
10
10
10
10
D
D
120
80
40
−1
−2
−3
−4
−5
−6
0
T
T
function of drain-source voltage; typical values
gate-source voltage
0
0
j
j
= 25 °C; t
= 25 °C;V
2
p
DS
= 300 s
min
= V
1
GS
4
typ
6
V
GS
2
(V) = 10
max
V
GS
8
6.0
5.0
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
V
DS
(V)
03np29
03ng53
(V)
Rev. 03 — 29 February 2008
10
3
Fig 7. Drain-source on-state resistance as a function
Fig 9. Forward transconductance as a function of
R
(mΩ)
DSon
(S)
g
fs
30
25
20
15
10
40
30
20
10
T
T
of gate-source voltage; typical values
drain current; typical values
3
5
j
j
= 25 °C; I
= 25 °C;V
N-channel TrenchMOS logic level FET
10
D
DS
= 20 A
= 25V
7
15
BUK9Y19-55B
20
11
V
© NXP B.V. 2008. All rights reserved.
25
GS
I
(V)
D
03np28
03np15
(A)
15
30
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