BUK9Y19-55B,115 NXP Semiconductors, BUK9Y19-55B,115 Datasheet - Page 8

• Manufacturer Part Number: BUK9Y19-55B,115
• Description: MOSFET N-CH 55V 46A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y19-55B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 46A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.3 mOhm @ 20A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0173 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 46 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058366115::BUK9Y19-55B T/R::BUK9Y19-55B T/R

NXP Semiconductors
BUK9Y19-55B_3
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
T
V
charge; typical values
0
GS
j
= 25 °C; I
= 0V
D
5
= 25 A
V
DS
10
= 14 V
(A)
I
S
100
V
80
60
40
20
0
15
DS
0
= 44 V
Q
G
(nC)
03np14
Rev. 03 — 29 February 2008
20
0.3
T
j
T
= 175 °C
j
= 25 °C
0.6
Fig 15. Input, output and reverse transfer capacitances
(pF)
2400
1800
1200
C
600
0.9
0
10
V
as a function of drain-source voltage; typical
values
GS
−1
V
SD
= 0V ; f = 1 M H z
03np13
(V)
N-channel TrenchMOS logic level FET
1.2
1
C
C
C
oss
iss
rss
BUK9Y19-55B
10
V
© NXP B.V. 2008. All rights reserved.
DS
(V)
03np31
10
2
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