BUK765R2-40B,118 NXP Semiconductors, BUK765R2-40B,118 Datasheet

MOSFET N-CH 40V 75A D2PAK

BUK765R2-40B,118

Manufacturer Part Number
BUK765R2-40B,118
Description
MOSFET N-CH 40V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK765R2-40B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
203W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
52nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
40V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.2 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0052 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
143 A
Power Dissipation
203000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057713118::BUK765R2-40B /T3::BUK765R2-40B /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
Symbol Parameter
V
I
P
Avalanche ruggedness
E
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
DS(AL)S
GD
DSon
Q101 compliant
Suitable for standard level gate drive
sources
12 V loads
Automotive systems
Continuous current is limited by package.
BUK765R2-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 16 January 2009
drain-source voltage T
drain current
total power
dissipation
non-repetitive
drain-source
avalanche energy
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
V
see
T
I
R
T
V
V
Figure 14
V
T
see
D
j
mb
j(init)
j
GS
GS
DS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 75 A; V
Figure
Figure 12
= 25 °C; see
= 32 V; T
= 10 V; T
= 50 Ω; V
= 10 V; I
= 10 V; I
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 175 °C
j
mb
GS
= 25 °C; see
= 25 A;
= 25 A;
≤ 40 V;
Figure
= 25 °C;
= 10 V;
Figure 2
Figure
11;
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
3;
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
16
4.4
Max
40
75
203
494
-
5.2
Unit
V
A
W
mJ
nC
mΩ

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BUK765R2-40B,118 Summary of contents

Page 1

... BUK765R2-40B N-channel TrenchMOS standard level FET Rev. 02 — 16 January 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... BUK765R2-40B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) BUK765R2-40B_2 Product data sheet N-channel TrenchMOS standard level FET Simplified outline mb [ SOT404 (D2PAK) Rev. 02 — 16 January 2009 BUK765R2-40B Graphic symbol mbb076 Version SOT404 © NXP B.V. 2009. All rights reserved ...

Page 3

... ° °C; see Figure ° °C; mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) Rev. 02 — 16 January 2009 BUK765R2-40B N-channel TrenchMOS standard level FET Min Max - - see Figure 3; [1] - 143 1; see Figure Figure 3 - 573 - 203 ...

Page 4

... P der (%) 150 200 T mb (°C) Fig 2. Limit R DSon = Capped due to package 1 Rev. 02 — 16 January 2009 BUK765R2-40B N-channel TrenchMOS standard level FET 0 50 100 150 T mb Normalized total power dissipation as a function of mounting base temperature 03nj24 µs 100 µ 100 ms ...

Page 5

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK765R2-40B_2 Product data sheet Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board Rev. 02 — 16 January 2009 BUK765R2-40B N-channel TrenchMOS standard level FET Min Typ Max - - 0. 03nj25 t p δ = ...

Page 6

... °C j from source lead to source bond pad ° °C; see Figure /dt = -100 A/µ - ° Rev. 02 — 16 January 2009 BUK765R2-40B N-channel TrenchMOS standard level FET Min Typ Max 4 500 - 2 100 - 2 100 - 4 ...

Page 7

... Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values 03aa35 max ( (V) GS Fig 8. Forward transconductance as a function of drain current; typical values Rev. 02 — 16 January 2009 BUK765R2-40B N-channel TrenchMOS standard level FET 03nk18 (V) 03nk16 (A) © NXP B.V. 2009. All rights reserved ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of junction temperature 2 03nk20 a 1 0.5 0 -60 300 400 I D (A) Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 16 January 2009 BUK765R2-40B N-channel TrenchMOS standard level FET 03aa32 max typ min 0 60 120 T (°C) j 03aa27 0 60 120 ( ° © ...

Page 9

... ° 0.9 1 (V) Fig 14. Gate-source voltage as a function of gate charge; typical values 4000 C C iss (pF) 3000 C oss 2000 1000 C rss (V) Rev. 02 — 16 January 2009 BUK765R2-40B N-channel TrenchMOS standard level FET 03nk15 (nC) 03nk21 10 2 © NXP B.V. 2009. All rights reserved ...

Page 10

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 16 January 2009 BUK765R2-40B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK765R2-40B separated from data sheet BUK75_765R2_40B-01. • Package outline updated. BUK75_765R2_40B-01 20030514 ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 16 January 2009 BUK765R2-40B N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK765R2-40B_2 All rights reserved. Date of release: 16 January 2009 ...

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