BUK765R2-40B NXP Semiconductors, BUK765R2-40B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK765R2-40B

Manufacturer Part Number
BUK765R2-40B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
2. Pinning information
Table 1:
[1]
Pin
1
2
3
mb
It is not possible to make connection to pin 2 of the SOT404 package.
Description
gate (g)
drain (d)
source (s)
mounting base,
connected to
drain (d)
Pinning - SOT78 and SOT404, simplified outlines and symbol
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
[1]
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability:
BUK755R2-40B in SOT78 (TO-220AB)
BUK765R2-40B in SOT404 (D
BUK75/765R2-40B
TrenchMOS™ standard level FET
Rev. 01 — 14 May 2003
TrenchMOS™ technology
175 C rated
Automotive systems
Motors, lamps and solenoids
E
I
D
Simplified outline
DS(AL)S
SOT78 (TO-220AB)
75 A
1 2
mb
3
494 mJ
MBK106
SOT404 (D
1
2
-PAK).
mb
2
2
3
-PAK)
MBK116
Q101 compliant
Standard level compatible.
12 V loads
General purpose power switching.
R
P
tot
DSon
203 W.
= 4.4 m (typ)
Symbol
MBB076
g
Product data
d
s

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BUK765R2-40B Summary of contents

Page 1

... Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK755R2-40B in SOT78 (TO-220AB) BUK765R2-40B in SOT404 (D 1.2 Features TrenchMOS™ technology 175 C rated 1.3 Applications Automotive systems Motors, lamps and solenoids 1 ...

Page 2

Philips Semiconductors 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC drain-gate voltage (DC) DGR V gate-source voltage (DC drain current (DC) ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature ...

Page 4

Philips Semiconductors 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base R thermal resistance from junction to th(j-a) ambient SOT78 package SOT404 package 4.1 Transient thermal impedance 1 = 0.5 Z ...

Page 5

Philips Semiconductors 5. Characteristics Table 4: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors Table 4: Characteristics …continued unless otherwise specified. j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 9397 750 11233 Product data Conditions Min ...

Page 7

Philips Semiconductors 400 20 10 9.5 label ( ( 8.5 12 300 8 7.5 200 7 6.5 100 6 5 ...

Page 8

Philips Semiconductors 5 V GS(th) (V) 4 max 3 typ min - mA Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 9

Philips Semiconductors 100 175 Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

Page 10

Philips Semiconductors 6. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...

Page 11

Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...

Page 12

Philips Semiconductors 7. Soldering handbook, full pagewidth 8.35 8.15 4.85 7.95 Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. 9397 750 11233 Product data 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 solder lands ...

Page 13

Philips Semiconductors 8. Revision history Table 5: Revision history Rev Date CPCN Description 01 20030514 - Product data (9397 750 11233) 9397 750 11233 Product data BUK75/765R2-40B TrenchMOS™ standard level FET Rev. 01 — 14 May 2003 © Koninklijke Philips ...

Page 14

Philips Semiconductors Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 15

Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...

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