STD5N20T4 STMicroelectronics, STD5N20T4 Datasheet

MOSFET N-CH 200V 5A DPAK

STD5N20T4

Manufacturer Part Number
STD5N20T4
Description
MOSFET N-CH 200V 5A DPAK
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet

Specifications of STD5N20T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
4 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Power Dissipation
45000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6563-2
STD5N20T4

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DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
December 2000
STD5N20
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
ADD SUFFIX “T4” FOR OREDERING IN TAPE &
REEL
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
dv/dt (1)
Symbol
I
V
DM
P
V
V
T
DGR
I
I
TOT
T
stg
DS
GS
D
D
TYPE
j
(
l
)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.6
200 V
V
DSS
R
< 0.8
DS(on)
C
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
5 A
N-CHANNEL 200V - 0.6 - 5A DPAK
I
D
(1)I
(**) Limited only by Maximum Temperature Allowed
MESH OVERLAY™ MOSFET
SD
INTERNAL SCHEMATIC DIAGRAM
5A, di/dt 300A/µs, V
–65 to 150
DD
TO-252
DPAK
Value
0.36
200
200
±20
150
3.5
20
45
V
5
5
(BR)DSS
1
STD5N20
, T
3
j
T
JMAX.
W/°C
V/ns
Unit
°C
°C
W
V
V
V
A
A
A
1/8

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STD5N20T4 Summary of contents

Page 1

... ADD SUFFIX “T4” FOR OREDERING IN TAPE & REEL DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Company’s proprietary edge termina- tion structure, makes it suitable in coverters for lighting applications ...

Page 2

STD5N20 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Avalanche Current, Repetitive or Not-Repetitive I AR (pulse width limited by ...

Page 3

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Off-voltage Rise Time r(Voff) t Fall ...

Page 4

STD5N20 Output Characteristics Tranconductance Gate Charge vs Gate-source Voltage 4/8 Tranfer Characteristics Static Drain-Source On Resistance Capacitance Variations ...

Page 5

Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STD5N20 5/8 ...

Page 6

STD5N20 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...

Page 7

TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0 inch MAX. MIN. ...

Page 8

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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