STD5N20T4 STMicroelectronics, STD5N20T4 Datasheet - Page 3

• Manufacturer Part Number: STD5N20T4
• Description: MOSFET N-CH 200V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STD5N20T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 700mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6563-2; STD5N20T4

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
d(on)
Q
Q
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
rr
gs
gd
c
r
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7
= 4.7
= 6 A, V
=6 A, di/dt = 100A/µs
= 100 V, I
= 160V, I
= 10V
= 100V, T
= 160V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
GS
D
D
D
j
= 0
= 150°C
Thermal Impedance
= 6 A,
= 6 A,
= 10 V
= 3 A
= 10V
Min.
Min.
Min.
Typ.
Typ.
Typ.
155
700
4.5
7.5
18
30
19
40
10
65
9
Max.
Max.
Max.
1.5
27
24
6
STD5N20
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
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