STD5N20T4 STMicroelectronics, STD5N20T4 Datasheet - Page 2

• Manufacturer Part Number: STD5N20T4
• Description: MOSFET N-CH 200V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STD5N20T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 700mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6563-2; STD5N20T4

STD5N20
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
DYNAMIC
2/8
Rthj-case
Rthc-sink
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
I
I
I
C
DS(on)
C
E
GS(th)
D(on)
C
fs
I
GSS
DSS
AR
T
oss
AS
rss
iss
(1)
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
CASE
DD
I
V
V
V
V
V
V
V
V
I
D
D
V
= 50 V)
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 µA, V
= 2.5A
= 25 °C UNLESS OTHERWISE SPECIFIED)
= Max Rating
= Max Rating, T
= V
> I
> I
= ±20V
= 10V, I
= 10V
= 25V, f = 1 MHz, V
D(on)
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
x R
x R
D
= 2.5 A
GS
= 250µA
DS(on)max,
DS(on)max,
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
200
1.5
2
5
2.77
100
275
1.5
Max Value
130
Typ.
Typ.
Typ.
350
0.7
70
35
5
3
4
Max.
±100
Max.
Max.
0.8
50
1
4
°C/W
°C/W
°C/W
Unit
Unit
Unit
Unit
mJ
µA
µA
°C
nA
pF
pF
pF
A
V
V
A
S