STN3PF06 STMicroelectronics, STN3PF06 Datasheet
STN3PF06
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STN3PF06 Summary of contents
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... Table 1. Device summary Order code STN3PF06 March 2008 P-channel 0.20 Ω SOT-223 STripFET™ II Power MOSFET R DS(on max < 0.22 Ω 2.5 A Figure 1. Marking Package N3PF06 SOT-223 Rev 4 STN3PF06 SOT-223 Internal schematic diagram Packaging Tape and reel www.st.com 1/12 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STN3PF06 ...
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... STN3PF06 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope T Operating junction temperature j T Storage temperature stg 1 ...
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... Max rating Max rating > D(on ± Parameter Test conditions V > D(on 1. MHz (see Figure 14) Min. Typ =125 ° DS(on)max, 2.5 = 250 µ 1.5 A 0.20 D Min. Typ DS(on)max, 1.5 850 230 STN3PF06 Max. Unit V 1 µA 10 µA A ±100 Ω 0.22 Max. Unit ...
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... STN3PF06 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f t Off-voltage rise time r(Voff) t Fall time f t Cross-over time c Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance STN3PF06 ...
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... STN3PF06 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature 7/12 ...
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... Test circuits 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times 8/12 Figure 14. Gate charge test circuit STN3PF06 ...
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... STN3PF06 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STN3PF06 inch MIN. TYP. MAX. 0.071 0.024 0.027 0.031 0.114 0.118 0.122 0.009 0.010 0.013 0.248 0.256 0.264 0.090 0.181 0.130 0.138 ...
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... STN3PF06 5 Revision history Table 8. Document revision history Date 08-May-2007 27-Mar-2008 Revision 3 The document has been reformatted 4 Document status promoted from preliminary data to datasheet. Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STN3PF06 ...