STN3PF06 STMicroelectronics, STN3PF06 Datasheet - Page 6

• Manufacturer Part Number: STN3PF06
• Description: MOSFET P-CH 60V 2.5A SOT223
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STN3PF06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 220 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4116-2

Electrical characteristics
2.1
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Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Safe operating area
Output characteristics
Transconductance
Figure 3.
Figure 5.
Figure 7.
Thermal impedance
Transfer characteristics
Static drain-source on resistance
STN3PF06