STN3PF06 STMicroelectronics, STN3PF06 Datasheet - Page 5
![MOSFET P-CH 60V 2.5A SOT223](/photos/5/48/54884/sot-223_sml.jpg)
STN3PF06
Manufacturer Part Number
STN3PF06
Description
MOSFET P-CH 60V 2.5A SOT223
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STN3PF06.pdf
(12 pages)
Specifications of STN3PF06
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
220 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Forward Transconductance Gfs (max / Min)
1.5 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4116-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STN3PF06
Manufacturer:
STMicroelectronics
Quantity:
48 156
Company:
Part Number:
STN3PF06
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
Part Number:
STN3PF06
Manufacturer:
ST
Quantity:
20 000
STN3PF06
Note:
Table 6.
Table 7.
1. Pulse width limited by Tjmax
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
Symbol
Symbol
I
V
SDM
t
t
t
I
r(Voff)
d(on)
d(off)
SD
RRM
I
Q
SD
t
t
t
t
t
c
rr
r
f
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Switching times
Parameter
Parameter
I
I
V
V
R
(see Figure 13)
V
R
(see Figure 13)
V
R
(see Figure 13)
SD
SD
DD
DD
DD
clamp
G
G
G
=4.7 Ω, V
=4.7 Ω, V
=4.7 Ω, V
= 1.5 A, V
= 12 A, di/dt = 100 A/µs
= 30 V, I
= 30 V, I
= 30 V, T
Test conditions
Test conditions
= 48 V, I
D
D
GS
GS
GS
GS
j
=6 A,
=6 A,
D
=150 °C
=10 V
=10 V
=10 V
=12 A,
= 0
Electrical characteristics
Min.
Min
Typ.
Typ.
100
260
5.2
20
40
40
10
10
17
30
Max.
Max
2.5
1.2
10
Unit
Unit
µC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
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