STB16NF06LT4 STMicroelectronics, STB16NF06LT4 Datasheet - Page 3

• Manufacturer Part Number: STB16NF06LT4
• Description: MOSFET N-CH 60V 16A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB16NF06LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 345pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 16 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4322-2

STB16NF06L
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2. I
3. Starting T
Table 2.
Rthj-case
Rthj-amb
Symbol
SD
dv/dt
E
V
I
DM
V
V
AS
T
T
P
DGR
≤ 16A, di/dt ≤ 210A/µs, V
I
I
T
DS
GS
stg
J
D
D
tot
j
(1)
(3)
(2)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery avalanche energy
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
D
= 8A, V
DD
=V(
DD
BR)DSS
= 30V
Parameter
C
GS
, T
= 25°C
GS
j
= 20 kΩ)
≤ T
= 0)
JMAX
C
C
= 25°C
= 100°C
-55 to 175
Value
± 16
127
0.3
60
60
16
11
64
45
23
Electrical ratings
3.33
62.5
300
W/°C
V/ns
Unit
mJ
°C
W
V
V
V
A
A
A
°C/W
°C/W
°C
3/13