STB16NF06LT4 STMicroelectronics, STB16NF06LT4 Datasheet - Page 5

• Manufacturer Part Number: STB16NF06LT4
• Description: MOSFET N-CH 60V 16A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB16NF06LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 345pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 16 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4322-2

STB16NF06L
Table 5.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
V
(see
SD
SD
DD
= 16A, V
= 16A, di/dt = 100A/µs,
= 16V, T
Figure
Test conditions
14)
GS
j
= 150°C
= 0
Min.
Electrical characteristics
Typ.
67.5
2.7
50
Max.
1.3
16
64
Unit
nC
ns
A
A
V
A
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