STB16NF06LT4 STMicroelectronics, STB16NF06LT4 Datasheet - Page 4

• Manufacturer Part Number: STB16NF06LT4
• Description: MOSFET N-CH 60V 16A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB16NF06LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 345pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 16 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4322-2

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
I
V
V
V
R
(see
V
V
(see
D
D
C
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
G
= 250µA, V
= 80A
= 125°C
Test conditions
= 4.7Ω V
Test conditions
>I
= Max rating
= Max rating,
= ± 16V
= V
= 5V, I
= 10V, I
= 25V, f = 1MHz,
= 0
= 30V, I
= 48V, I
= 4.5V, R
Figure
Figure
D(on)
GS
, I
D
x R
12)
13)
D
GS
D
D
D
= 8A
GS
G
= 8A
= 8A
= 16A,
= 250µA
DS(on)max,
= 4.5V
= 4.7Ω
=0
Min.
Min.
60
1
Typ.
Typ.
0.08
0.07
12.5
345
7.3
2.1
3.1
17
72
29
10
37
20
Max.
STB16NF06L
Max.
±100
0.10
0.09
10
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω
Ω