STB16NF06LT4 STMicroelectronics, STB16NF06LT4 Datasheet - Page 8

MOSFET N-CH 60V 16A D2PAK

STB16NF06LT4

Manufacturer Part Number
STB16NF06LT4
Description
MOSFET N-CH 60V 16A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB16NF06LT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
345pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
16 A
Power Dissipation
45000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
8A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
70mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4322-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB16NF06LT4
Manufacturer:
ST
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Company:
Part Number:
STB16NF06LT4
Quantity:
10 920
Test circuit
3
8/13
Figure 12. Switching times test circuit for
Figure 14. Test circuit for inductive load
Figure 16. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 13. Gate charge test circuit
Figure 15. Unclamped Inductive load test
Figure 17. Switching time waveform
circuit
STB16NF06L

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