IRF9310PBF International Rectifier, IRF9310PBF Datasheet

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... 4 - Standard Pack Form SO8 Tube/Bulk SO8 Tape and Reel Parameter @ 10V GS @ 10V IRF9310PbF ® HEXFET Power MOSFET  '  '  '  ' SO-8 Resulting Benefits Lower Conduction Losses results in Multi-Vendor Compatibility Environmentally Friendlier Note Quantity 95 4000 Max. Units -30 ± 20 -20 -16 -160 2.5 1 ...

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Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS Breakdown Voltage Temp. Coefficient DSS J R DS(on) Static Drain-to-Source On-Resistance V Gate Threshold Voltage GS(th) V Gate Threshold Voltage Coefficient GS(th) ...

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PULSE WIDTH Tj = 25°C 100 10 1 0.1 -2.3V 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° -10V 60µs PULSE WIDTH ...

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150°C 10. 25°C 1.00 0.10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

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125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 2700 2400 2100 1800 1500 1200 900 ...

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DUT 20K S Fig 18a. Gate Charge Test Circuit D.U DRIVER -V -20V GS 0. Fig 19a. Unclamped Inductive Test Circuit Fig 20a. Switching Time Test Circuit 6 ...

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SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã ...

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... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. ...