IRF9310PBF International Rectifier, IRF9310PBF Datasheet - Page 3

• Manufacturer Part Number: IRF9310PBF
• Description: MOSFET P-CH 30V 20A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9310PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.4V @ 100µA
• Gate Charge (qg) @ Vgs: 165nC @ 10V
• Input Capacitance (ciss) @ Vds: 5250pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 3.9mohm
• Rds(on) Test Voltage Vgs: -10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 20 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 58 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
100000
10000
1000
1000
1000
0.01
100
100
0.1
100
1.0
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
0.1
1
1
Tj = 25°C
60µs PULSE WIDTH
-2.3V
-V DS , Drain-to-Source Voltage (V)
C oss
C rss
-V GS , Gate-to-Source Voltage (V)
C iss
-V DS , Drain-to-Source Voltage (V)
T J = 150°C
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2
1
f = 1 MHZ
V DS = -10V
10
3
60µs PULSE WIDTH
T J = 25°C
10
TOP
BOTTOM
4
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
100
100
5
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
14.0
12.0
10.0
10
8.0
6.0
4.0
2.0
0.0
1.6
1.4
1.2
1.0
0.8
0.6
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
Tj = 150°C
I D = -16A
60µs PULSE WIDTH
I D = -20A
V GS = -10V
-V DS , Drain-to-Source Voltage (V)
25
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
V DS = -24V
V DS = -15V
1
50
-2.3V
75
10
100
TOP
BOTTOM
125
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
100
150
3