IRF9310PBF International Rectifier, IRF9310PBF Datasheet - Page 2
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IRF9310PBF
Manufacturer Part Number
IRF9310PBF
Description
MOSFET P-CH 30V 20A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9310TRPBF.pdf
(8 pages)
Specifications of IRF9310PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.4V @ 100µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
5250pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
3.9mohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
6.8 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 20 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9310PBF
Manufacturer:
IR
Quantity:
20 000
Notes:
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
Thermal Resistance
R
R
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
V
DS(on)
GS(th)
G
iss
oss
rss
AS
SD
g
g
gs
gd
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
When mounted on 1 inch square copper board.
R
JL
JA
For DESIGN AID ONLY, not subject to production testing.
2
Starting T
V
GS(th)
DSS
DSS
is measured at T
/ T
J
J
= 25°C, L = 4.9mH, R
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction-to-Drain Lead
Junction-to-Ambient
400µs; duty cycle
= 25°C (unless otherwise specified)
Parameter
J
of approximately 90°C.
Ã
G
Parameter
Parameter
2%.
Parameter
f
= 25 , I
g
AS
d
= -16A.
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
39
0.020
5250
1300
-1.8
-5.8
–––
–––
–––
–––
–––
–––
110
880
–––
–––
–––
3.9
5.8
2.8
58
17
28
25
47
65
70
71
12
-150
-100
Typ.
Typ.
-160
–––
–––
-2.4
-1.0
100
–––
-2.5
-1.2
––– mV/°C
–––
–––
165
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
107
–––
–––
4.6
6.8
18
V/°C
m
nC
nC
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
I
R
See Figs. 20a &20b
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
J
J
G
= -16A
= -1.0A
= 25°C, I
= 25°C, I
= 1.8
= 0V, I
= -10V, I
= -4.5V, I
= V
= -24V, V
= -24V, V
= -20V
= 20V
= -10V, I
= -15V, V
= -10V
= -15V
= -15V, V
= 0V
= -15V
GS
Max.
Max.
630
, I
-16
20
50
D
D
S
F
= -250µA
D
D
D
= -100µA
= -2.5A, V
GS
GS
GS
GS
= -2.5A, V
Conditions
Conditions
= -20A
= -16A
= -16A
e
= 0V
= 0V, T
= -4.5V, I
= -4.5V
D
e
= -1mA
e
DD
J
GS
e
www.irf.com
= 125°C
D
= -24V
= 0V
= - 16A
G
Units
Units
°C/W
mJ
A
e
D
S